| abstract |
(Solution) A developer for a photosensitive resist material containing a cyclic ammonium hydroxide represented by the formula (1). (Wherein R 1 and R 2 are a linear, branched or cyclic alkyl group having 1 to 6 carbon atoms, or an alkenyl group or an alkynyl group having 2 to 10 carbon atoms, R 3 is a methylene group, an ethylene group, -O-CH 2 -, -S-CH 2 - or -NH-CH 2 -. (Effect) By performing development using the developer of the present invention, the swelling of the resist film of the photosensitive resist material, particularly the chemically amplified positive resist material, during development can be suppressed to suppress the occurrence of pattern collapse and bridge defects, The varnish can obtain a small pattern. |