| abstract |
PROBLEM TO BE SOLVED: To provide a method for forming a copper wiring layer and a method for manufacturing a semiconductor device capable of forming a copper wiring having a desired cross-sectional area without any thinning. After a base insulating film 2, a base barrier layer 3, and a copper seed layer 4 are sequentially formed on a substrate 1, a wiring groove 6 pattern of a photoresist layer 5 is formed on the copper seed layer 4. A copper wiring layer 7 is formed on the copper seed layer 4 exposed at the bottom of the wiring groove 6 (FIG. 2A), a protective layer 8 is formed on the layer 7, and a photoresist layer is formed using this layer 8 as a mask. 5, the copper seed layer 4 and the underlying barrier layer 3 are sequentially etched to form a pattern of the copper wiring layer 7 shown in FIG. In order to prevent copper from diffusing from this layer 7, an interlayer insulating layer is formed on the surface. [Selection] Figure 2 |