| abstract |
The etching method of the present invention includes the step of supplying a first mixed gas containing a β-diketone-containing etching gas and a nitrogen oxide gas to a target having, on a surface, both a first metal film containing cobalt, iron, or manganese and a second metal film containing copper, thereby selectively etching the first metal film over the second metal film, or the step of supplying a second mixed gas containing a β-diketone-containing etching gas and oxygen gas to the target, thereby selectively etching the second metal film over the first metal film. |