| abstract |
The etching method of the present invention is characterized by supplying an etching containing β-diketone to a processed body in which a first metal film containing cobalt, iron, or manganese and a second metal film containing copper are formed on the surface. The first mixed gas of gas and oxynitride gas is used to selectively etch the first metal film with respect to the second metal film, or by supplying an etching gas containing β-diketone to the object to be processed In the step of the second mixed gas of oxygen and oxygen, the second metal film is selectively etched with respect to the first metal film. |