| abstract |
The present invention provides a semiconductor manufacturing apparatus and a semiconductor manufacturing method having excellent embedding characteristics with respect to a recess having a high aspect ratio. An insulating material forms a ring shape along the edge of the substrate, the inner edge is formed higher than the outer portion, and the upper surface of the inner edge is the main surface on which the film is formed on the substrate. And a first nozzle 801 for introducing a first gas consisting only of a compound gas that generates a first ionic species necessary for the surface reaction into the reaction chamber. And a second ion species having a jet direction parallel to the surface of the substrate, having a smaller number than the first nozzle, and having a sputtering efficiency for the material to be deposited or etched is higher than the first ion species. A second nozzle 901 for introducing a second gas, which is a raw material to be generated or a raw material to generate a radical species necessary for the surface reaction of the substrate, into the reaction chamber, the first nozzle and the second nozzle of Even without introducing He gas into the reaction chamber from one. [Selection] Figure 1 |