http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10240232-B2

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filingDate 2016-06-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c831012e04718c6061bda227998fc2a
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publicationDate 2019-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-10240232-B2
titleOfInvention Gas control in process chamber
abstract A process chamber is provided including a sidewall, a substrate support, and an exhaust vent disposed above the substrate support. A processing region is formed between the exhaust vent and substrate support, and the exhaust vent is coupled to an exhaust device configured to create a low pressure at the exhaust vent relative to the processing region. The process chamber further includes a gas ring including an annular shaped body having an inner surface that circumscribes an annular region. The gas ring further includes a plurality of first nozzles that are coupled to a first gas source and configured to deliver a first gas to the processing region. The gas ring further includes a plurality of second nozzles that are coupled to a second gas source and configured to deliver a second gas to the processing region.
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priorityDate 2015-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 49.