| abstract |
[PROBLEMS] To provide a plasma processing method and a plasma processing apparatus in which anisotropic film formation characteristics and anisotropic etching characteristics are improved. SOLUTION: A reaction chamber (1, 2) capable of evacuating, a substrate holder (4a, 4b, 4c, 4d) for disposing a substrate 5 disposed in the reaction chamber, a reaction chamber connected to the reaction chamber , 807,..., 807, and a plurality of first nozzles 801,. .., a plurality of second nozzles 901 facing in the horizontal direction , 905,..., At least high frequency electric field applying means (3, 6) for generating plasma inside the reaction chamber. From the first nozzle, a first gas serving as a raw material for generating a first ion species necessary for a surface reaction of the substrate 5 is introduced. From the second nozzle, a second gas serving as a raw material for generating a second ion species having a higher sputtering efficiency than the first ion species is introduced. |