Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
filingDate |
2004-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4131a812472d7f6a6837567fa415a1df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c5d40c5d324d50a8809f32982cb8fb6 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a58820f5e28a7e061bd104f61ed572d2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6d39b038ebed466e3a921e00653bd16d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9a8441b3742091a6533e0b909a75625 |
publicationDate |
2005-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
JP-2005217371-A |
titleOfInvention |
Semiconductor device and manufacturing method thereof |
abstract |
PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in electrical characteristics by preventing diffusion of a barrier metal material and copper into a hole and a method for manufacturing the same. A diffusion prevention film and an interlayer insulating film are formed on a lower wiring. The interlayer insulating film 4 is a porous low dielectric constant insulating film having a relative dielectric constant of less than 3.0. A via plug 17 and a copper wiring layer 18 are provided in the interlayer insulating film 4, and a reaction product film 9 as an intermediate film containing carbon and fluorine is formed between the interlayer insulating film 4 and the barrier metal film 14. ing. The film thickness of the reaction product film 9 is preferably in the range of 1 nm to 15 nm. [Selection] Figure 10 |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5168142-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-100751698-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2009153857-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006245268-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2008085297-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8461041-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8043957-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2009153857-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-5413563-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-4540504-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8018023-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2007132879-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009170901-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8278763-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009278132-A |
priorityDate |
2004-02-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |