| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e75437279df06ab5eb6ed3281549306e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_e5db580deca7130dbe51805c6c608b35
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_4b568b5effe72a96bd0aa544888b0548
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b4bb5111ced3df34b2539013960b87cb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bb5c25c81b663813f70546c2ef2694cb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-0002
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02203
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31695
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-485
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76826
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76825
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53295
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53238 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-4763 |
| filingDate |
2010-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_01005821c04746851988051102edb5bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_454e62461d3e48cc39b4eeeff0e1cc20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca0224ff9432ed65337a00d01ead00a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a22c1fc564f4146295a015d2e29f2793 |
| publicationDate |
2013-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-8461041-B2 |
| titleOfInvention |
Semiconductor device and method of manufacturing semiconductor device |
| abstract |
The method of manufacturing a semiconductor device includes forming an insulating film of a silicon compound-group insulation film; forming an opening in the insulation film, applying an active energy beam in an atmosphere containing hydrocarbon gas to form a barrier layer of a crystalline SiC, and forming an interconnection structure of copper in the opening with the barrier layer formed in. |
| priorityDate |
2008-06-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |