| abstract |
A step of forming insulating films 38, 40, 42 made of a silicon compound insulating material on the substrate 10, a step of forming openings 48 in the insulating films 38, 40, 42, and an atmosphere containing a hydrocarbon gas. The step of forming a barrier layer 50 made of crystalline SiC on the inner surface of the opening 48 by irradiating with active energy rays and a wiring structure 52 made of copper in the opening 48 in which the barrier layer 50 is formed. Forming the step. |