| abstract |
PROBLEM TO BE SOLVED: To provide an insulating film material formed by chemical vapor deposition suitable for an interlayer insulating material for a semiconductor device, and an insulating film formed from these materials and a semiconductor device using the insulating film. An organic silane compound and an organic siloxane compound represented by any one of general formulas (1) to (4) comprising a silane compound or a siloxane compound in which a secondary hydrocarbon group and / or an alkenyl group are directly bonded to a silicon atom. An insulating film material formed by chemical vapor deposition is used. [Chemical 1] [Chemical 2] [Chemical 3] [Formula 4] [Selection figure] None |