| abstract |
Provided is a semiconductor device wherein diffusion of copper to an impurity diffusion region of an MIS type FET from a contact plug through an insulating film is suppressed when copper is used as the contact plug for the semiconductor device. An MIS type FET (20) is arranged on the surface of a substrate (1), and on the substrate (1), an insulating film (5) is arranged to cover the MIS type FET (20). The insulating film (5) is provided with an opening (11) reaching an impurity diffusion region (21) of the MIS type FET (20), and an opening (11) reaching a gate electrode (4) or an extraction section (19) of the gate electrode (4). The opening (11) is filled with a conductive member (8) having copper as a main component, and the insulating film (5) includes a layer containing silicon, oxygen carbon and hydrogen as main components. |