| abstract |
The present invention relates to use of a film as a sealing film in a gas barrier member, an FPD device, a semiconductor device or the like, said film being formed from a carbon-containing silicon oxide by CVD using, as a starting material, an organosilicon compound that has a specific structure having a secondary hydrocarbon group directly bonded to at least one silicon atom, with the atomic ratio of oxygen atoms being 0.5 or less relative to 1 of silicon atoms. |