| abstract |
Disclosed is a novel Si-containing film forming material, particularly an Si-containing film forming material comprising an alkylsilane compound suitable for a PECVD apparatus. An organosilane compound having a structure in which at least one cyclopropyl group is directly bonded to a silicon atom (specific example: 2,4,6-tricyclopropyl-2,4,6-trimethylcyclotrisiloxane) is contained. A Si-containing film is produced by PECVD using the Si-containing film forming material, and used as an insulating film of a semiconductor device. [Selection] Figure 1 |