| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a0c60211f3b0453235b69355d077c9e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_38e4b503b1979a5d277324483132316a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-402
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-505
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 |
| filingDate |
2000-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_725e296a2d8be033ea9b3ee7dcf8b7b4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a1a3ae6a0a38273e439fe1037b8d9eae
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9c5b831f011f4a9905de035828879d2c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4c293623a731fd2773cd3edbe5b5932
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fcea9e8082de840d2345b5029692501 |
| publicationDate |
2001-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2001291713-A |
| titleOfInvention |
Film forming method and semiconductor device |
| abstract |
PROBLEM TO BE SOLVED: To provide a method of forming a silicon-containing insulating film having a low dielectric constant and easy etching, and a semiconductor device provided with the silicon-containing insulating film formed by the film forming method. To do. SOLUTION: A compound having a siloxane bond and a Si-R bond (R is an alkyl group), a reaction gas containing an oxidizing gas and H 2 are turned into plasma and reacted to form a silicon-containing material on a substrate 103 to be deposited. It depends on a film formation method for forming the insulating film 204. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2004111506-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006237562-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2007254651-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8513448-B2 |
| priorityDate |
2000-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |