| abstract |
A novel Si-containing film forming material, in particular, a low dielectric constant insulating film material containing a cyclic siloxane compound suitable for a PECVD apparatus, a Si-containing film using the same, and a semiconductor comprising these films Provide a device. The following general formula (1) (In the formula, A represents a group containing at least one selected from the group consisting of an oxygen atom, a boron atom, and a nitrogen atom, n represents 1 or 2, and x represents an integer of 2 to 10) It is used as a Si-containing film forming material containing a cyclic siloxane compound represented by [Selection figure] None |