| abstract |
PROBLEM TO BE SOLVED: To provide an antireflection film material having a high etching selectivity with respect to a resist, that is, a high etching speed with respect to a resist, and to form an antireflection film layer on a substrate using the antireflection film material. A pattern forming method and a pattern forming method using this antireflection film as a hard mask for substrate processing are also provided. An organic group having a carbon-oxygen single bond and / or a carbon-oxygen double bond, a light-absorbing group, and a silicon atom terminated with Si-OH and / or Si-OR. An antireflection silicone resin is provided. The present invention also provides an antireflection film material containing (A) an antireflection silicone resin, (B) an organic solvent, and (C) an acid generator. [Selection figure] None |