| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89afae566b725ae78e20cf972d9bcdc7 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039 |
| filingDate |
1998-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a94ad2454631c4e26d3471c10e56b9e3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_977167a467d04d898c2ec940703de4eb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e4d23f318d5093fce331c95cb4581feb |
| publicationDate |
1999-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-H11327146-A |
| titleOfInvention |
New chemically amplified positive photoresist |
| abstract |
(57) [Summary] [Problem] 0.25 μm or less, specifically 0.15 to Provided is a novel chemically amplified positive photoresist excellent in sensitivity, resist pattern shape and resolution suitable for forming an ultrafine pattern such as 0.22 μm. SOLUTION: A chemically amplified positive photoresist is prepared by incorporating (A) a film-forming resin component whose alkali solubility is increased by an acid and (B) an acid generator comprising a poly (disulfonyldiazomethane) compound. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2005015779-A |
| priorityDate |
1998-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |