| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_424db9d56b06a23aed410fcf5df652f3 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-075 |
| filingDate |
2006-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4d15835feeb1a7bd77386e5fa4161cf2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3a727bc2adef7c088b52170c16eb5a93
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5e0a5be1d9b10e1384cfd329c0747c50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4856861c3aa0e9c958f966e2283bfc54 |
| publicationDate |
2007-08-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2007218943-A |
| titleOfInvention |
Substrate and pattern forming method |
| abstract |
A substrate in which an antireflection silicon resin film is formed on an organic film and a photoresist film is sequentially formed on the organic film, and the resist pattern on the antireflection silicon resin film is more reliably almost perpendicular. A substrate that can be shaped is provided. At least a substrate having an antireflection silicon resin film formed on an organic film and a photoresist film on the organic film, the antireflection silicon resin film has zero hardness due to a nanoindenter. A substrate having a thickness of 4 GPa to 1.1 GPa. [Selection] Figure 1 |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8617800-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2009103831-A |
| priorityDate |
2006-02-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |