http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2002261043-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_80787665b837ed3eb503bbcd27c0043a |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-778 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-338 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 |
| filingDate | 2001-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_68c700f10ed9ae9b04dd0792e3236c3d |
| publicationDate | 2002-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | JP-2002261043-A |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device having a fine pattern exceeding the limit of the conventional fine processing by slightly modifying an etching technique by inheriting an already established i-line exposure technique. I will provide a. A method for manufacturing a semiconductor device, comprising: forming a material to be etched on one main surface of a semiconductor substrate; A step of forming a mask pattern on the material to be etched, and a step other than the mask pattern of the material to be etched by a dry etching method using an etchant gas and a polymer deposition gas in a state where an etching suppression wall is formed on the upper side of the mask pattern. Etching the region. The material to be etched after the etching is a gate electrode or a wiring pattern. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101618910-B1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9362135-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8765589-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7045462-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9048182-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101190074-B1 |
| priorityDate | 2001-03-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.