http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-101190074-B1
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-4763 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2008-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2012-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2012-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | KR-101190074-B1 |
| titleOfInvention | Method for manufacturing semiconductor device |
| abstract | The manufacturing method of a semiconductor device comprises the process of forming the insulating layer of the protrusion shape which has a surface and the rising surface which rises upwards from this surface on a semiconductor substrate, and forms a conductive layer so that the insulating layer of a protrusion shape may be covered. And patterning and removing a predetermined region of the conductive layer by an etching process using a microwave plasma using microwave as a plasma source while applying a bias power of 70 mW / cm 2 or more to a semiconductor substrate under a high pressure condition of 85 mTorr or higher. It includes. |
| priorityDate | 2007-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.