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filingDate 2015-05-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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publicationDate 2016-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber US-9362135-B2
titleOfInvention Semiconductor device manufacturing method
abstract A semiconductor device manufacturing method, the method including: forming an insulation layer having a protruding portion, the insulation layer having a surface and a rising surface that protrudes upward from the surface, on a semiconductor substrate; forming a conductive layer to cover the insulation layer having the protruding portion; and removing a predetermined region of the conductive layer by patterning the predetermined region according to an etching process using microwave plasma, which uses a microwave as a plasma source, while applying bias power of 70 mW/cm 2 or above on the semiconductor substrate, under a high pressure condition of 85 mTorr or above.
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Total number of triples: 30.