| abstract |
(57) [Problem] To provide a method of forming a thin film using an atomic layer deposition method. SOLUTION: A first reactant containing a thin-film element and a ligand is injected and purged into a reaction chamber including a substrate, and then a second reactant is injected and purged. The second reactant is formed by using a substance whose binding energy with the element forming the thin film is larger than that of the ligand to form a thin film by a chemical reaction between the element forming the thin film and the second reactant, and preventing generation of a by-product. . Alternatively, a substance containing no hydroxyl group is used as the second reactant, and after reacting with the third reactant containing the hydroxyl group after purging the second reactant, the substance having no hydroxyl group is contained in the thin film. Suppress the generation of by-products. Alternatively, after purging the second reactant, a third reactant is injected and purged to remove impurities and improve stoichiometry. Thus, a thin film containing no impurities in the thin film and having excellent stoichiometry can be obtained. |