| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_294881271413951a95f284b588a68e66 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-792
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-788
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8247 |
| filingDate |
2001-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90f3744d549fbe22f0ab7b747038072a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b597e8bad2fe75ae90e70b5e31d0be5a |
| publicationDate |
2002-08-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
JP-2002222875-A |
| titleOfInvention |
Nonvolatile semiconductor memory device and method of manufacturing the same |
| abstract |
PROBLEM TO BE SOLVED: To improve a data retention characteristic and a write / erase repetition resistance in a nonvolatile semiconductor memory element similar to a MONOS type flash memory. SOLUTION: A gate insulating film 7 having a discrete trap is provided between a gate electrode G of a MIS transistor and a semiconductor substrate (Si substrate 1), and data is stored and erased by charging and discharging the trap. In the nonvolatile semiconductor memory device 200 for performing the above, the discrete ultrathin film 1 containing a refractory metal as a trap formation layer in the gate insulating film 7 2 is provided. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2006066896-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2008069325-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7079762-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2020074392-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-WO2008069325-A1 |
| priorityDate |
2001-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |