| abstract |
Leakage current in a high dielectric metal oxide film or high dielectric metal silicate film used for a gate insulating film can be reduced. In the formation of a gate insulating film made of a high dielectric metal silicate, the exposure time of a precursor containing a metal or the like is a time at which a film formation rate is saturated by a surface adsorption reaction, and the exposure time of an oxidizing agent is used. Performs ALD deposition using a time during which the composition of the metal oxide film is 97% or more of the stoichiometric value. [Selection] Figure 1 |