| abstract |
(57) [Summary] [Constitution] A lactone-containing compound represented by the following general formula (1). Embedded image (In the formula, R 1 represents a hydrogen atom, a methyl group or CH 2 CO 2 R 5. R 2 represents a hydrogen atom, a methyl group or CO 2 R 5 . R 3 represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms. R 4 represents a hydrogen atom or CO 2 R 5 . R 5 is a straight, branched or cyclic alkyl group having 1 to 15 carbon atoms. X represents CH 2 , CH 2 CH 2 , O or S. [Effect] The resist material using the polymer compound of the present invention as a base resin is sensitive to high-energy rays and excellent in sensitivity, resolution, and etching resistance, and thus is useful for fine processing by electron beams or far ultraviolet rays. It is. In particular, since the absorption at the exposure wavelength of an ArF excimer laser or a KrF excimer laser is small, a fine pattern perpendicular to the substrate can be easily formed. |