| abstract |
Process for preparing thin films of semiconductor material, characterized in that it consists in subjecting a wafer of semiconductor material comprising a planar face in the case where the material is polycrystalline, to the following three steps: - a first implantation step by bombardment (2) of the face (4) of said wafer (1) by means of ions creating in the volume of said wafer a layer (3) of gaseous microbubbles delimiting in the volume of said wafer a lower region ( 6) constituting the mass of the substrate and an upper region (5) constituting the thin film, - a second step of bringing the flat face (4) of said plate into intimate contact with a stiffener (7) consisting of at least a layer of rigid material; - a third step of heat treatment of the assembly of said plate (1) and of said stiffener (7) at a temperature above the temperature at which the ionic bombardment (2) is carried out and sufficient to create by rearrangement effect crystalline in said wafer (1) and pressure in the microbubbles a separation between the thin film (5) and the mass of the substrate (6). |