| abstract |
This structure comprises a solid substrate (10), in particular in silicon, and a thin-film substrate (16) in semiconductor material, in particular a binary, ternary or quaternary III-V, IV-IV or II-VI material, transferred by a method of ion implantation on the surface of this massive substrate, at least one photovoltaic cell (22), epitaxied on the thin-film substrate and, on either side of the structure, of the contact points (24, 26) at the massive substrate and epitaxial cell. Advantageously, the solid substrate is made of silicon and incorporates another photovoltaic cell (28). The material of the thin film substrate is chosen from the group comprising GaAs, InP, GaInP, AlGaAs, SiC, SiGe and II-VI alloys. |