| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_31b1220216408a6076f55e0ba4ec1003 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-185
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10S438-967 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-403
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7605 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-18 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-02 |
| filingDate |
2007-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_aa0d64d25aae3b980f37bfa0d778ce6d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a0c5c34ab867c8372e6b69f248b82614
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_17428940a88ca97fc2ed5dc921e6c3cc |
| publicationDate |
2011-02-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
US-7888235-B2 |
| titleOfInvention |
Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
| abstract |
A method for fabricating a semiconductor substrate. In an embodiment, this method includes the steps of transferring a seed layer on to a support substrate; and depositing a working layer on the seed layer to form a composite substrate. The seed layer is made of a material that accommodates thermal expansion of the support substrate and of the working layer. The result is a semiconductor substrate that includes the at least one layer of semiconductor material on a support substrate. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-10347794-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2011042685-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8951887-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9082948-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9202741-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-2015221832-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-9142412-B2 |
| priorityDate |
2000-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |