| abstract |
A method of forming a feature in a substrate comprising the steps of: forming a dielectric layer on a substrate; forming an antireflective coating over the dielectric layer; forming a photoresist pattern over the antireflective coating; etching the dielectric layer through the patterned photoresist; and removing the antireflective coating and the photoresist, wherein the antireflective coating is a film represented by the formula Si v O w C x N u H y F z , wherein v+w+x+u+y+z = 100%, v is from 1 to 35 atomic%, w is from 1 to 65 atomic%, x is from 5 to 80 atomic%, u is from 0 to 50 atomic %, y is from 10 to 50 atomic% and z is from 0 to 15 atomic%, wherein the antireflective coating is formed by the chemical vapor deposition of a composition comprising (1) at least one precursor selected from an organosilane, an organosiloxane, and an aminosilane; and (2) a hydrocarbon, and wherein the hydrocarbon is substantially not removed from the antireflective coating. |