| abstract |
There is provided a composition for forming anti-reflective coating for anti-reflectivencoating that has a good absorption of light at a wavelength utilized fornmanufacturing a semiconductor device, that exerts a high protection effect againstnlight reflection, that has a high dry etching rate compared with the photoresist layer.nConcretely, the composition for forming anti-reflective coating contains a triazinentrione compound, oligomer compound or polymer compound having hydroxyalkylnstructure as substituent on nitrogen atom. |