| abstract |
In addition to the initial electrical characteristics immediately after the manufacture of a gate insulating film, the electrical characteristics after other steps when an organic thin film transistor is manufactured using the gate insulating film and the electrical characteristics of the manufactured element Providing a new gate insulating film forming material considering reliability. A gate insulating film forming agent for a thin film transistor, comprising an oligomer compound or polymer compound containing a repeating unit having a triazinetrione ring having a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and a solvent, and obtained therefrom A gate insulating film for a thin film transistor, a thin film transistor having the insulating film, and a method for manufacturing the same. [Selection figure] None |