| abstract |
This invention provides an antireflection film, which has high reflected light preventive effect, does not cause intermixing with a photoresist, can form a photoresist pattern having no significant hemming bottom, and can be used in a lithographic process using irradiation light such as ArF excimer laser and F2 excimer laser, and a composition for the formation of this antireflection film. The composition for antireflection film formation comprises a product of a reaction between an isocyanuric acid compound containing two or three 2,3-epoxypropyl groups and a benzoic acid compound. |