| abstract |
The object of the present invention is to provide annaqueous dispersion for chemical mechanical polishing which cannbe polished working film for semiconductor devices and whichnis useful for STI. The aqueous dispersion for chemicalnmechanical polishing of the invention is characterized byncomprising an inorganic abrasive such as silica, ceria and thenlike, and organic particles composed of a resin having anionicngroup such as carboxyl group into the molecular chains. Thenremoval rate for silicon oxide film is at least 5 times,nparticularly 10 times the removal rate for silicon nitride film.nThe aqueous dispersion may also contain an anionic surfactantnsuch as potassium dodecylbenzene sulfonate and the like. Andna base may also be included in the aqueous dispersion fornadjustment og the pH to further enhance the dispersability,nremoval rate and selectivity. |