| abstract |
There is provided an aqueous dispersion for CMP with annexcellent balance between chemical etching and mechanical polishingnperformance. The aqueous dispersion for CMP of the invention isncharacterized by comprising an abrasive, water and a heteropolyacid.nAnother aqueous dispersion for CMP according to the invention isncharacterized by comprising an abrasive, water, a heteropolyacidnand an organic acid. Yet another aqueous dispersion for CMPnaccording to the invention is characterized by comprising colloidalnsilica with a primary particle size of 5-100 nm, water and anheteropolyacid. Preferred for the heteropolyacid is at least onentype selected from among silicomolybdic acid, phosphorotungsticnacid, silicotungstic acid, phosphoromolybdic acid andnsilicotungstomolybdic acid. Preferred for the organic acid is atnleast one selected from among oxalic acid, malonic acid, succinicnacid, glutaric acid, adipic acid, maleic acid, fumaric acid,nphthalic acid, malic acid, tartaric acid and citric acid. |