| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31053
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-304 |
| classificationIPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3105
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09G1-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K3-14
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B24B37-00 |
| filingDate |
2004-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8382f19a5bb23f13b53ac198ffadc45b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c5d56c6c033d9fd7b104c7056105aba |
| publicationDate |
2004-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
EP-1479741-A2 |
| titleOfInvention |
Chemical mechanical polishing method for STI |
| abstract |
A chemical/mechanical polishing method for polishing annobject to be polished with an irregular surface, having ansubstrate with convexities and concavities, a stopper layernformed on the convexities of the substrate, and an embeddedninsulating layer formed to cover the concavities of thensubstrate and the stopper layer, wherein the method isncharacterized comprising a first polishing step of flatteningnthe embedded insulating layer using a slurry (A) which cannmaintain the polishing speed at 500 Å/min or less and a secondnpolishing step of further polishing the embedded insulatingnlayer to cause the stopper layer on the convexities to be exposednusing a slurry (B) which can maintain the polishing speed atn600 Å/min or more. The method is useful for flattening wafersnduring shallow trench isolation (STI) in manufacturingnsemiconductor devices. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-7291280-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-1894978-A3
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-8080476-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2006047088-A1 |
| priorityDate |
2003-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |