| abstract |
It is an object of the present invention to provide an aqueousndispersion and CMP slurry that can achieve polishing at annadequate rate without producing scratches in the polishingnsurfaces of wafer working films, and a polishing process fornwafer surfaces and a process for manufacture of a semiconductorndevice using them. A CMP slurry and the like of the presentninvention contains polymer particles with a crosslinkednstructure and a mean particle size of 0.13-0.8 µm. The CMPnslurry may contain be no surfactant, and may contain thensurfactant of not greater than 0.15 wt%. A CMP slurry and thenlike of another present invention contains polymer particlesnand inorganic particles of silica, aluminum and the like. anmean particle size of the polymer particles may be not greaternthan a mean particle size of the inorganic particles. And thenmean particle size of the inorganic coagulated particles maynbe 0.1-1.0 µm, and may be smaller than the mean particle sizenof the polymer particles. The CMP slurry is used as a polishingnagent and a working film of a silicon oxide film, an aluminumnfilm, a tungsten film or a copper film formed on a wafer isnpolished. And a semiconductor device is manufactured by usingnthe CMP slurry. |