| abstract |
A resist composition comprising (A) an organicnsolvent; (B) at least two polymers with weight averagenmolecular weights of 1,000-500,000, which have at leastnone type of acid labile group and are crosslinked within anmolecule and/or between molecules with crosslinking groupsnhaving C-O-C linkages; and (C) a photoacid generator isnsensitive to high-energy radiation, has excellentnsensitivity, resolution, and plasma etching resistance,nand provides resist patterns of outstanding thermalnstability and reproducibility. Patterns obtained withnthis resist composition are less prone to overhanging andnhave excellent dimensional controllability. The resistncomposition is suitable as a micropatterning material fornVLSI fabrication because it has a low absorption at thenexposure wavelength of a KrF excimer laser, thus enablingnthe easy formation of a finely defined pattern havingnsidewalls perpendicular to the substrate. |