| abstract |
(57) [Summary] [Solution] One or two represented by the following general formula (1). Having at least one repeating unit and having a weight average molecular weight of 3,0 A high molecular compound, which is from 00 to 300,000. Embedded image (Wherein R 1 is a hydrogen atom or a methyl group, R 2 is a hydrogen atom or an acid labile group, at least one is a hydrogen atom and at least one is an acid labile group. N is 2 or 3 [Effect] The chemically amplified positive resist material using the polymer compound of the present invention as a base resin is sensitive to high energy rays, has excellent sensitivity, resolution, and plasma etching resistance, and has a high heat resistance of the resist pattern. It is also excellent in sex. In addition, the pattern is unlikely to be overhanging and has excellent dimensional controllability. Therefore, the chemically amplified positive type resist material of the present invention can be a resist material having a small absorption particularly at the exposure wavelength of the KrF excimer laser due to these characteristics, and can easily form a fine pattern perpendicular to the substrate. It can be formed, and is suitable as a fine pattern forming material for VLSI manufacturing. |