| abstract |
This process comprises the following stages: (a) covering a substrate with a layer of photosensitive resin comprising a polymer carrying functional groups, preferably phenolic, mixed or bonded to a photosensitive crosslinking agent, such as a bis- arylazide, (b) exposure to visible or ultraviolet light of the layer through a mask, (c) treatment of the layer with a silicon compound (eg hexamethyldisilazane) and (d) dry development by etching plasma (eg oxygen plasma), to remove the irradiated parts of the layer. The silicon compound diffuses selectively in the non-irradiated parts of the layer and fixes in these parts; by dry etching, a silicon oxide mask is formed which protects these non-irradiated parts during this operation.n n n Application to the manufacture of integrated circuits. |