http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0249457-A2
Outgoing Links
Predicate | Object |
---|---|
assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_be055db3c1a09879df07379ba969e223 |
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-26 |
filingDate | 1987-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_27f8b301f3479c283903d7821f6b2deb |
publicationDate | 1987-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | EP-0249457-A2 |
titleOfInvention | Method for formation of patterns |
abstract | Disclosed is a method for formation of a resist pattern used in the photo lithography steps for preparing semi-conductor devices and more particularly, a method for formation of a superfine resist pattern which comprises selectively exposing a resist surface of a photosensitive high molecular film to light to modify the exposed area to a hydrophilic property, chemically adsorbing a Si-containing reagent selectively to the modified area and then subjecting to O₂ RIE using the Si-adsorbed film as a mask. The method is also characterized by enabling to formation of a finer pattern formation using a monomolecular film or monomolecular built-up film formed by the LB method or the chemical adsorption method in place of the resist described above. |
isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0291670-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/EP-0445534-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-5114737-A |
priorityDate | 1986-06-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 67.