| abstract |
A film of a photoresist having phenolic hydroxyl groups is irradiated with far-ultraviolet radiation, and is thereafter developed with an alkaline aqueous solution. Using the resist pattern thus obtained as a mask, dry etching is carried out to form a microscopic pattern. The photoresist of this composition is highly immune against dry etching, so that the microscopic pattern can be formed at a high precision. By adding an azide of a specified structure, the photoresist has its sensitivity to the far-ultraviolet radiation greatly enhanced, allowing shorter exposure times. |