| abstract |
An insulating film for a semiconductor which comprises a cured product of a siloxane prepolymer produced by hydrolyzing and polycondensatingn (a) a tetraalkoxysilane of the formula: nSi(OR¹)₄ (I) (b) an alkyl- or aryl-trialkoxysilane of the formula: nR²Si(OR³)₃ (II) (c) an dialkyl- or diaryl-dialkoxysilane of the formula: nR⁴R⁵Si(OR⁶)₂ (III) in a molar fraction of (a):(b):(c) of 0.14-0.50 : 0.03-0.66 : 0.11-0.66 wherein R¹ to R⁶ are the same or different and are alkyl groups having 1 to 6 carbon atoms or aryl groups having 6 to 10 carbon atoms, which has good crack resistance, adhesivity with a substrate and surface evenness. |