| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6bc8aefc289a8d59f22ef88e19b3c1a8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d54d657b35bd622887f9fd1b42d0c685
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_edda6989a1294372076425272d519447
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ff2dd64eb61b4e5b88c14219ce75fd0a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02126 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09D183-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-312 |
| filingDate |
2005-05-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_03e7c64715433ce4b37b675433247072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3beb932df60f9f0af82c4c3f4a97a5d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_64358c653d32e5a52819750c888b3876 |
| publicationDate |
2005-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2005122228-A1 |
| titleOfInvention |
Method for preparing a gap-filling dielectric film |
| abstract |
A patterned substrate containing gaps and suitable for pre-metal dielectric (PMD) or shallow trench isolation (STI) devices can be spin-coated with a solution of a polymer resin of a trihydrolyzable silane and a tetraalkylorthosilicate; upon solvent removal and curing, theresin forms a crosslinked dielectric material that fills the gaps and is virtually free of voids. |
| priorityDate |
2004-06-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |