| abstract |
In an embodiment, the device includes: a backside redistribution structure, the backside redistribution structure comprising: a metallization pattern on the first dielectric layer; and a second dielectric layer on the metallization pattern; a via, through extending through the first dielectric layer to contact the metallization pattern; an integrated circuit die adjacent to the via on the first dielectric layer; a molding compound over the first dielectric layer, the molding compound sealing the via and the integrated circuit die a conductive connection extending through the second dielectric layer to contact the metallization pattern, the conductive connection being electrically connected to the via; and an intermetallic compound located at the interface of the conductive connection and the metallization pattern, the intermetallic compound only partially extends into the metallization pattern. Embodiments of the present invention also relate to semiconductor packages and methods. |