| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2fb272959740a2231f287ac6bf4d190a |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02186
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-46
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-34
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0228
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02312 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 |
| filingDate |
2018-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f05f4793d82b77713afe21a3272686aa
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b7cd0b0ce55ac28165e8731b4007eb77 |
| publicationDate |
2019-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2019229785-A1 |
| titleOfInvention |
Semiconductor device production method, substrate processing device, and program |
| abstract |
Provided is a technology that enables selective formation of a film on a substrate. The method according to the present invention comprises: a step for supplying an inorganic ligand-containing reformation gas to a substrate having a first surface and a second surface different from the first surface so as to reform the first surface; and a step for supplying a deposition gas to the substrate so as to selectively grow a film on the second surface. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2022144328-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-102559830-B1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11521848-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/KR-20210109465-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2022054216-A1
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7339975-B2
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113314393-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-2021136349-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/JP-7072012-B2 |
| priorityDate |
2018-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |