| abstract |
A selective deposition process for fin field effect transistors (FinFETs) is utilized to provide a method for forming a fin structure with desired materials formed at different locations of the fin structure. In one embodiment, a method of forming a structure with a desired material on a substrate includes depositing a first material on the substrate on which a three-dimensional (3D) structure is formed, and further, a first of the 3D structure. Performing an implantation process to dope the region. The first material can be removed and the second material can be deposited over the 3D structure. The second material can be selectively grown on the second region of the 3D structure. [Selection] Figure 7 |