| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_11a94a4328794cd0957865c96834edfc |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-683
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67098
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0475
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02378
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6875
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-68728 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3065
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-302
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-683 |
| filingDate |
2016-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e93b921d9368059b8c4094be7ffc0eba
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_20edae09f310bb1e7f9ce5f5708e34d2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6682d1fd3d3c45a5aed839bea77e24e0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2cb0942e982b95c396c03ec6a61cf34b |
| publicationDate |
2017-04-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
WO-2017061122-A1 |
| titleOfInvention |
Heat treatment vessel for single-crystal silicon carbide substrate and etching method |
| abstract |
A heat treatment vessel (1) is provided with a support member (6) for supporting a disc-shaped SiC substrate (2), which is a target object, when the SiC substrate (2) is undergoing etching. The support member (6) has an inclined surface (6F) for supporting an end (2E) of a lower surface of the SiC substrate (2), the inclined surface being inclined so as to increasingly approach the centerline of the SiC substrate (2) going downward. More specifically, the support member (6) is formed in a conical shape with a diameter that increases going downward, and a conical surface which is the peripheral surface of the support member constitutes the aforementioned inclined surface (6F). A vertically-midway section of the inclined surface (6F) contacts the end (2E) of the lower surface of the SiC substrate (2). |
| priorityDate |
2015-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |