| abstract |
There is provided a CVD apparatus capable of forming an epitaxial film uniformly and stably on a semiconductor substrate even when a carbon material is used as a susceptor. A susceptor (11, 12) made of a carbon material is provided in a container 10, and a semiconductor substrate (70) made of silicon carbide (SiC), also installed in the container 10, is heated based on the lower susceptor 12 being heated. While heating, a carrier gas containing hydrogen gas (H 2 ) and a source gas consisting of silane gas (SiH 4 ) and propane gas (C 3 H 8 ) are supplied into the container 10 to epitaxially deposit on the surface of the semiconductor substrate 70. A film is formed. At this time, a film material 16 having a high etching resistance against a carrier gas, such as a pyrolytic carbon film, is formed in advance on at least the surface of the lower susceptor 12 facing the semiconductor substrate 70. [Selection] Figure 1 |