| abstract |
Provided is a pattern forming method, comprising (1) a step of forming a resist underlayer film on a workpiece substrate, (2) a step of forming a resist film, on the resist underlayer film, using a resist composition containing a resin (A) that has a repeating unit including Si atoms and a compound (B) that creates acid when irradiated with active rays or radioactive rays, (3) a step of exposing the resist film, (4) a step of forming a negative resist pattern by developing the exposed resist film with a developer containing an organic solvent, and (5) a step of forming a pattern by processing the resist underlayer film and the workpiece substrate with the resist pattern as a mask, wherein the content of the resin (A) is 20 mass% or more with respect to the total solid of the resist composition. Thus, the pattern forming method can achieve high resolution, high depth of focus (DOF) performance, high development defect performance, and high etching resistance, particularly when forming the resist pattern for a trench pattern and a contact hole pattern with a small dissolution region for a resist film while minimizing the formation cost for the resist pattern. Also provided are a laminate and a resist composition for organic solvent development, which are applicable to the pattern forming method. |